Download PDF by Adrian C. Melissinos: Principles of Modern Technology

By Adrian C. Melissinos

ISBN-10: 0511622899

ISBN-13: 9780511622892

ISBN-10: 0521352495

ISBN-13: 9780521352499

ISBN-10: 0521389658

ISBN-13: 9780521389655

In line with a path taught on the college of Rochester, this quantity describes the actual rules on which glossy know-how is predicated. 4 fundamental parts are mentioned; desktops and microelectronics, communications, nuclear power and house flight. each one subject is taken care of in a fashion that offers the reader with perception into the underlying physics that makes the expertise attainable in addition to the orders of value concerned. The publication will entice somebody attracted to smooth know-how and may function a reference booklet and a textbook for classes in utilized physics, and engineering.

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Download e-book for kindle: Principles of Modern Technology by Adrian C. Melissinos

In line with a path taught on the collage of Rochester, this quantity describes the actual ideas on which smooth expertise relies. 4 basic parts are mentioned; desktops and microelectronics, communications, nuclear strength and area flight. each one subject is handled in a way that offers the reader with perception into the underlying physics that makes the know-how attainable in addition to the orders of importance concerned.

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Drain - Diffusion Gate - Diffusion Diffusion Source (b) The field effect transistor (FET) 33 through an FET. We first calculate the capacitance of the gate A WL Cg = Kse0- = Ks80— where Ks is the relative dielectric constant of SiO2, Ks~\l. 24) LD Fig. 28. Circuit symbols for FETs: (a) enhancement FET, {b) depletion FET. Drain Gate Drain 11 Gate I tH -p, Source + (a) Enhancement FET Source (b) Depletion FET Fig. 29. FET current-voltage characteristics for different voltages: (a) enhancement FET, (b) depletion FET.

4KDD = 0^. 3KDD jfi^^ r^~ V G = -0-3K D D i 'DD (a) Enhancement FET (b) Depletion FET 1 . gate 34 The transistor In the above equations W, L and D are the width, length and depth of the gate as defined in Fig. 27, and fi is the mobility. Eq. 24) is valid in the linear region where / DS is proportional to VD. The saturation current is independent of VD and given to a good approximation by / J -^(V -KB sat — ^s^O /-% r n \VG -V K Y (125) \1-Z'J/ thr/ This quadratic dependence on (VG — Vthr) can be seen in the characteristic curves of Fig.

29. FET current-voltage characteristics for different voltages: (a) enhancement FET, (b) depletion FET. 4KDD = 0^. 3KDD jfi^^ r^~ V G = -0-3K D D i 'DD (a) Enhancement FET (b) Depletion FET 1 . gate 34 The transistor In the above equations W, L and D are the width, length and depth of the gate as defined in Fig. 27, and fi is the mobility. Eq. 24) is valid in the linear region where / DS is proportional to VD. The saturation current is independent of VD and given to a good approximation by / J -^(V -KB sat — ^s^O /-% r n \VG -V K Y (125) \1-Z'J/ thr/ This quadratic dependence on (VG — Vthr) can be seen in the characteristic curves of Fig.

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Principles of Modern Technology by Adrian C. Melissinos


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